1 to-220f item symbol ratings unit drain-source voltage v ds 100 v dsx *5 70 continuous drain current i d 41 pulsed drain current i d(puls] 164 gate-source voltage v gs 30 non-repetitive avalanche current i as *2 41 maximum avalanche energy e as *1 204.7 maximum drain-source dv/dt dv ds /dt *4 20 peak diode recovery dv/dt dv/dt *3 5 max. power dissipation p d ta=25 c 2.16 tc=25 c 53 operating and storage t ch +150 temperature range t stg isolation voltage v iso *6 2 electrical characteristics (t c =25c unless otherwise specified) thermalcharacteristics 2sK3645-01mr fuji power mosfet n-channel silicon power mosfet features high speed switching low on-resistance no secondary breadown low driving power avalanche-proof applications switching regulators ups (uninterruptible power supply) dc-dc converters maximum ratings and characteristic absolute maximum ratings (tc=25c unless otherwise specified) item symbol test conditions zero gate voltage drain current i dss v ds =100v v gs =0v v ds =80v v gs =0v v gs =30v i d =15a v gs =10v i d =15a v ds =25v v cc =48v i d =15a v gs =10v r gs =10 ? min. typ. max. units v v a na m ? s pf nc a v s c ns min. typ. max. units thermal resistance r th(ch-c) channel to case r th(ch-a) channel to ambient 2.359 58.0 c/w c/w symbol v (br)dss v gs(th) i gss r ds(on) g fs c iss c oss c rss td (on) t r td (off) t f q g q gs q gd i av v sd t rr q rr item drain-source breakdown voltaget gate threshold voltage gate-source leakage current drain-source on-state resistance forward transcondutance input capacitance output capacitance reverse transfer capacitance turn-on time t on turn-off time t off total gate charge gate-source charge gate-drain charge avalanche capability diode forward on-voltage reverse recovery time reverse recovery charge test conditions i d = 250 a v gs =0v i d = 250 a v ds =v gs t ch =25c t ch =125c v ds =0v v ds =75v v gs =0v f=1mhz v cc =50v i d =30a v gs =10v l=146 h t ch =25c i f =30a v gs =0v t ch =25c i f =30a v gs =0v -di/dt=100a/s t ch =25c v v a a v a mj kv/s kv/s w c c kvrms 100 3.0 5.0 25 250 10 100 34 44 918 1110 1665 280 420 22 33 16 24 23 35 31 47 16 24 32 48 13 20 914 41 1.10 1.65 0.1 0.38 -55 to +150 outline drawings (mm) equivalent circuit schematic gate(g) source(s) drain(d) super f ap-g series *3 i f -i d , -di/dt=50a/s, vcc bv dss , tch 150c = < = < = < *4 v ds 100v < = www.fujielectric.co.jp/denshi/scd *5 v gs =-30v *6 t=60sec f=60hz *1 l=146h, vcc=48v,tch=25c, see to avalanche energy graph *2 tch 150c = < 200304
2 characteristics 2sK3645-01mr fuji power mosfet id=f(vgs):80s pulse test, vds=25v,tch=25c id=f(vds):80s pulse test,tch=25c gfs=f(id):80s pulse test, vds=25v,tch=25c rds(on)=f(id):80s pulse test, tch=25c 024681012 0 20 40 60 80 100 120 20v 7.0v 10v 8v 6.5v 7.5v 6.0v id [a] vds [v] typical output characteristics vgs=5.5v 012345678910 0.1 1 10 100 id[a] vgs[v] typical transfer characteristic 0.1 1 10 100 0.1 1 10 100 gfs [s] id [a] typical transconductance 0 20406080100120 0.00 0.03 0.06 0.09 0.12 0.15 0.18 7.0v 6.5v rds(on) [ ? ] id [a] typical drain-source on-state resistance 10v 20v 8v 7.5v vgs= 6.0v 0 25 50 75 100 125 150 0 10 20 30 40 50 60 allowable power dissipation pd=f(tc) pd [w] tc [ c] 0 25 50 75 100 125 150 0 100 200 300 400 500 600 i as =17a i as =41a i as =25a e as [mj] starting tch [ c] maximum avalanche energy vs. starting tch e as =f(starting tch):vcc=48v
3 2sK3645-01mr fuji power mosfet vgs=f(qg):id=30a, tch=25c if=f(vsd):80s pulse test,tch=25c t=f(id):vcc=48v, vgs=10v, rg=10 ? -50 -25 0 25 50 75 100 125 150 0 20 40 60 80 100 rds(on) [ m ? ] tch [ c] typ. max. drain-source on-state resistance rds(on)=f(tch):id=15a,vgs=10v -50 -25 0 25 50 75 100 125 150 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 max. min. gate threshold voltage vs. tch vgs(th)=f(tch):vds=vgs,id=1ma vgs(th) [v] tch [ c] 0 1020304050 0 2 4 6 8 10 12 14 qg [nc] typical gate charge characteristics vgs [v] vcc= 50v 10 -1 10 0 10 1 10 2 10 -2 10 -1 10 0 10 1 c [nf] vds [v] typical capacitance c=f(vds):vgs=0v,f=1mhz crss coss ciss 0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00 0.1 1 10 100 if [a] vsd [v] typical forward characteristics of reverse diode 10 -1 10 0 10 1 10 2 10 0 10 1 10 2 10 3 typical switching characteristics vs. id td(on) tr tf td(off) t [ns] id [a]
4 2sK3645-01mr fuji power mosfet http://www.fujielectric.co.jp/denshi/scd/ 10 -8 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 2 10 3 single pulse maximum avalanche current vs pulse width i av =f(t av ):starting tch=25 c,vcc=48v avalanche current i av [a] t av [sec] 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 -3 10 -2 10 -1 10 0 10 1 maximum transient thermal impedance zth(ch-c)=f(t):d=0 zth(ch-c) [c/w] t [sec]
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